Omsk Branch, Institute of Semiconductor Physics, Siberian Branch of RAS

V. V. Bolotov, S. N. Nesov, P. M. Korusenko, S. N. Povoroznyuk

Results of XPS and AES investigation of por−Si/SnO_x nanocomposite samples after different modes of heat treatment have been presented. We show that thermal treatment increases the penetration depth of tin and the stoichiometric coefficient x of the SnO_x compound. However, annealing at 600 °C leads to a strong oxidation of the porous matrix and eventual blockage of the tin diffusion channels. Optimization of the heat treatment modes allows one to obtain nanocomposite layers with a sufficient thickness of the por−Si/SnO_x nanocomposite for use in gas microsensors.

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