In the present work Ti–Al system was modified with silicon ionic implantation. It is established, that evolution of a microstructure, temperature-time intervals of existence of phases, kinetic transformations depend on a method of layer formation. It is shown, that at ionic implantation surface properties of materials are modified as a result of introduction of the high-energy ions causing change of the structure and phase formed at the top of the layers. It is revealed, that on samples with preliminary irradiated substrate with Si⁺ ions, process of interaction between the titanium and aluminum is slowed down. It is shown, that on preliminary implanted substrates at consecutive heat treatment, there is a degradation of the formed layer. Structural changes of implanted samples are accompanied with significant increases in microhardness depending on annealing after radiation by Si⁺ (1 MeV) ions with dose 10¹⁷ ion/cm².