JSC MIDAUS

A. A. Ustinov, A. I. Kozlov

Ul’yanovsk State University

Yu. S. Nagornov

Comparative characteristics of semiconductor pressure transducers with Silicon on Sapphire (SOS) structures are presented in the present work. Two kinds of pressure transducers with a single−layer diaphragm on the ceramic substrate and with a double−layer diaphragm (sapphire and metal) have been investigated. Single−layer pressure transducers have better characteristics compared with double−layer ones but their application is limited to a narrower pressure measurement range.