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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName Buffer Monolayers on the Strain State of GaAs Films on Vicinal Si(001) Substrates
ArticleAuthor I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, A. S. Ilin, M. A. Putyato, B. R. Semyagyn, V. V. Preobrazhensky
ArticleAuthorData

Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia Effects of the Formation Method of Early GaP:

I. D. Loshkarev

A. P. Vasilenko

E. M. Trukhanov

A. V. Kolesnikov

A. S. Ilin

M. A. Putyato

B. R. Semyagyn
V. V. Preobrazhensky

Abstract

A significant dependence of the strain state of GaAs film lattice grown by molecular−beam epitaxy (MBE) on the nucleation method of early GaP buffer layers (50 nm) on the vicinal substrate Si(001) 4° around the <011> axis was discovered. GaP growth started layer−by−layer with a gallium or a phosphorus sublayer. If GaP nucleated with a gallium sublayer, the GaAs film has a significant lattice rotation around the <011> axis. If the buffer starts forming with a phosphorus layer the GaAs film evidently rotates around the <001> axis. The film relaxation degree exceeds 100%, and the film is in a laterally strained state. Analysis was carried out using the triclinic distortion model. A reciprocal space scattering map was obtained using X−ray diffraction in a three−axis low resolution setup. The map clearly shows that the GaAs film lattice is rotated.

keywords Relaxation, heterosystem, vicinal interfaces
References

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