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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName Statistical Analysis of Ge Influence on Radiation and Thermal Stability of the Electrophysical Characteristics of Cz–Si

Based Device n—p—n—p–Structures

ArticleAuthor S. V. Bytkin, T. V. Kritskaya, S. P. Kobeleva
ArticleAuthorData

Zaporizhstal Integrated Iron & Steel Works JSC, Ukraine:

S. V. Bytkin

 

Zaporozhye State Engineering Academy, Ukraine:

T. V. Kritskaya

 

National University of Science and Technology MISIS:

S. P. Kobeleva

Abstract

The characteristics of low−power and high−power thyristors basen of dislocation−free single crystal silicon doped with germanium to the concentration range NGe ~ (0.05—1.5) · 1020 cm−3 have been investigated. The criterial parameters of thyristors exposed to radiation and high temperature gradients have been estimated using experimental data processing methods in the STATISTICA and MathCAD environments. We show the appropriateness of using germanium doped silicon for increasing the thermal stability and radiation strength of the devices exposed to γ−radiation in the range of doses of up to 2.94 · 106 mSv.

keywords Single crystal, silicon, germanium doping, thyristor, γ−radiation, criterial parameters
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